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Department teacher

Hui Deng

Hui Deng - A/Prof
Research Areas: Atomic level super finishing

Dr. Deng Hui obtained his bachelor’s degree in mechanical engineering from Huazhong University of Science and Technology in 2010. After that, he studied in Osaka University, Japan for about 6 years and obtained the master and Ph.D. degree in precision science and technology in 2013 and 2016 respectively. From 2013 to 2016, he also worked as a research fellow of Japan Society for Promotion of Science and Technology (JSPS). After graduation, he joined Singapore Institute of Manufacturing Technology (SIMTech) as a research scientist. His research interest is focused on atomic level super finishing, plasma-assisted hybrid machining and electrochemistry-assisted hybrid machining. Dr. Deng Hui has published several papers in top journals in manufacturing including CIRP Annals and International Journal of Machine Tools and Manufacture. He won the Rudolf Kingslake Award from SPIE in 2016.
 
 Research directions:

 Atomic level super finishing
◆ Plasma-assisted hybrid machining
◆ Electrochemistry-assisted hybrid machining
 
Educational background and working experience:
◆ 02/2016-present
Research Scientist, Singapore Institute of Manufacturing Technology (SIMTech), Singapore

 04/2013-03/2016
Research Fellow, Japan Society for Promotion of Science and Technology (JSPS) Osaka University, Osaka, Japan

 04/2013-03/2016
Ph.D., Osaka University, Department of Precision Science & Technology, Osaka, Japan

 04/2011-03/2013
M.A., Osaka University, Department of Precision Science & Technology, Osaka, Japan

 08/2010-03/2011
Research Assistant, Department of Precision Science & Technology, Graduate school of engineering, Osaka University, Osaka, Japan

 09/2006-06/2010
B.Sc., Huazhong University of Science & Technology, School of Mechanical Science and Engineering, Wuhan, China
 
 Awards:
 09/2016
Rudolf Kingslake Award from Society of Photographic Instrumentation Engineers (SPIE), USA

 02/2015
Chinese Government Award for Outstanding Self-Financed Students Abroad from the China Scholarship Council (CSC), China

 10/2014
Best presentation Award at the 10th China-Japan International Conference on Ultra-Precision Machining (CJUPM2014), China

◆ 06/2014
Promotion Award of Machine Tool Technology of Japan from the Machine Tool Technology Promotion Foundation, Japan

 05/2014
Distinguished Paper Award from the Mazak Foundation, Japan

 11/2013
Best Presentation Award from the Japan Society of Abrasive Technology, Japan

 03/2013
Excellent Student Award at the 9th China-Japan International Conference on Ultra-Precision Machining (CJUPM2013), Korea

◆ 09/2012
Best Presentation Award from the 10th International Conference on Progress of Machining Technology (ICPMT2012), Japan

◆ 11/2011
Best Paper Award at the 4th International Conference of Asian Society for Precision Engineering and Nanotechnology (ASPEN2011), China

 2011-2013
Sumitomo Scholar from Sumitomo Electric Group, Japan
 
Representative journal papers:
(1) Hui Deng, Katsuyoshi Endo and Kazuya Yamamura: Damage-free finishing of CVD-SiC by a combination of dry plasma etching and plasma-assisted polishing, International Journal of Machine Tools and Manufacture 155 (2017) 38-46. (SCI, Q1)
(2) Hui Deng, Katsuyoshi Endo and Kazuya Yamamura: Atomic-scale and pit-free flattening of GaN by combination of plasma pretreatment and time-controlled chemical mechanical polishing, Applied Physics Letter 107 (2015) 051602 1-4. (SCI, Q1)
(3) Hui Deng, Katsuyoshi Endo and Kazuya Yamamura: Plasma-assisted polishing of gallium nitride to obtain a pit-free and atomically flat surface, CIRP Annals-Manufacturing Technology 64 (2015) 531-534. (SCI, Q1)
(4) Hui Deng, Katsuyoshi Endo and Kazuya Yamamura: Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001), Scientific Reports 5 (2015) 8947 1-6. (SCI, Q1)
(5) Hui Deng, K. Hosoya, Y. Imanishi, Katsuyoshi Endo and Kazuya Yamamura: Electro-chemical mechanical polishing of single-crystal SiC using CeO2 slurry, Electrochemistry Communications 52 (2015) 5-8. (SCI, Q1)
(6) Hui Deng, K. Monna, T. Tabata, Katsuyoshi Endo and Kazuya Yamamura: Optimization of the plasma oxidation and abrasive polishing processes in plasma-assisted polishing for high effective planarization of 4H-SiC, CIRP Annals-Manufacturing Technology 63 (2014) 529-532. (SCI, Q1)
(7) Hui Deng, Masaki Ueda and Kazuya Yamamura: Characterization of 4H-SiC (0001) surface processed by plasma assisted polishing, International Journal of Advanced Manufacturing Technology 72 (2014) 1-7. (SCI, Q2)
(8) Hui Deng, Katsuyoshi Endo and Kazuya Yamamura: Comparison of thermal oxidation and plasma oxidation of 4H-SiC (0001) for surface flattening, Applied Physics Letter 104 (2014) 101608 1-5. (SCI, Q1)
(9) Hui Deng, Katsuyoshi Endo and Kazuya Yamamura: Atomic-scale planarization of 4H-SiC (0001) by combination of thermal oxidation and abrasive polishing, Applied Physics Letter 103 (2013) 111603 1-4. (SCI, Q1)
(10) Hui Deng and Kazuya Yamamura: Atomically Flattening Mechanism of 4H-SiC (0001) in Plasma-assisted Polishing, CIRP Annals-Manufacturing Technology 62 (2013) 575-578. (SCI, Q1)
 
Contact:

◆ dengh@sustc.edu.cn